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| SGP30N60 Preliminary data IGBT * Low forward voltage drop * High switching speed * Low tail current * Latch-up free * Avalanche rated Pin 1 Pin 2 Pin 3 G Type C Ordering Code E VCE 600V IC 30A Package SGP30N60 Maximum Ratings Parameter TO-220 AB Q67040-A . . . . Symbol Values Unit Collector-emitter voltage Collector-gate voltage RGE = 20 k V CE V CGR 600 V 600 V GE IC Gate-emitter voltage DC collector current TC = 25 C TC = 100 C 20 A 58 30 Pulsed collector current, tp = 1 ms TC = 25 C TC = 100 C ICpuls 116 60 E AS Avalanche energy, single pulse IC = 30 A, V CC = 50 V, RGE = 25 L = 100 H, Tj = 25 C mJ 65 P tot Power dissipation TC = 25 C W 250 Semiconductor Group 1 Apr-08-1998 SGP30N60 Preliminary data Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Storage temperature IEC climatic category, DIN IEC 68-1 Thermal Resistance Tj Tstg -55 ... + 150 -55 ... + 150 55 / 150 / 56 C - - Thermal resistance, junction - case RthJC 0.5 K/W Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Static Characteristics Collector-emitter breakdown voltage V GE = 0 V, IC = 0.5 mA, Tj = -55 C V (BR)CES V 600 - Gate threshold voltage V GE = VCE, IC = 0.7 mA, Tj = 25 C V GE = VCE, IC = 0.7 mA, Tj = 150 C V GE(th) 3 2 V CE(sat) 4 3 5 - Collector-emitter saturation voltage V GE = 15 V, IC = 30 A, Tj = 25 C V GE = 15 V, IC = 30 A, Tj = 150 C 1.6 ICES 2 2.3 2.5 2.8 A Zero gate voltage collector current V CE = 600 V, V GE = 0 V, Tj = 25 C V CE = 600 V, V GE = 0 V, Tj = 150 C IGES - 40 3000 nA Gate-emitter leakage current V GE = 25 V, VCE = 0 V - - 100 Semiconductor Group 2 Apr-08-1998 SGP30N60 Preliminary data Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit AC Characteristics Transconductance V CE = 20 V, IC = 30 A gfs S 6 20 pF 1600 2000 Input capacitance V CE = 25 V, V GE = 0 V, f = 1 MHz Ciss Output capacitance V CE = 25 V, V GE = 0 V, f = 1 MHz Coss Crss 150 190 Reverse transfer capacitance V CE = 25 V, V GE = 0 V, f = 1 MHz - 90 135 Semiconductor Group 3 Apr-08-1998 SGP30N60 Preliminary data Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Switching Characteristics, Inductive Load at Tj = 150 C Values typ. max. Unit Turn-on delay time V CC = 400 V, V GE = 15 V, IC = 30 A RGon = 11 td(on) ns tr 30 45 Rise time V CC = 400 V, V GE = 15 V, IC = 30 A RGon = 11 td(off) 45 70 Turn-off delay time V CC = 400 V, V GE = 15 V, IC = 30 A RGoff = 11 tf 320 480 Fall time V CC = 400 V, V GE = 15 V, IC = 30 A RGoff = 11 E on 70 105 mJ Total turn-on loss energy * V CC = 400 V, V GE = 15 V, IC = 30 A RGon = 11 , Tj = 150 C E off 1.81 2.35 Total turn-off loss energy V CC = 400 V, V GE = 15 V, IC = 30 A RGoff = 11 , Tj = 150 C QG(on) 0.92 1.2 nC Total Gate Charge V CC = 480 V, V GE = 15 V, IC = 30 A - 140 210 * includes the reverse recovery losses caused by the FWD of the BUP603D Semiconductor Group 4 Apr-08-1998 SGP30N60 Preliminary data Package Outlines Dimensions in mm Weight: Semiconductor Group 5 Apr-08-1998 |
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